Name :                                                 `Dr.Ram Kishore

Designation :                                       Professor (Ex-Scientist ‘G’ Director Grade NPL, New Delhi)

Date of Joining MAIT:                       July21,  2008

Office Address :                                 Block 9, Room No. 933

Email id :                                             drramkishore@gmailcom

Educational Qualifications :               M.Sc. (Physics), Ph.D. (Physics) Photovoltaics

Specialization:                                     Silicon Materials, Silicon Solar Cells, Photovoltaics, Nanomaterials, Electron Microscopy

Total Experience:                                Total :  47 Yrs (R&D : 37.5 years   Teaching : 10 yrs)

Total no. of Publications:                     150 +

  • International Journals :            50
  • Article in Books:                      10
  • International Conferences:      35
  • National Conferences:             55



  • Visiting Professor, University of Arkansas, Fayetteville, AR, USA  (March 10- April 10,2008)Visisting Professor, University of Arkansas, Fayetteville, AR, USA  ( Aug 01  2006   -  Oct  01, 2006)
  • Visiting Professor, University of Arkansas, Fayetteville, AR, USA ( March 27, 2005 – May30,  2005)
  • Visiting Professor, ASTEC, Kyushu University, Fukuoka, Japan ( Sept 2004- Dec 2004)
  • Associate Professor, UARK, Fayetteville,USA,1999-2000 ( Sept 24, 1999  -  Sept 20, 2000)
  • High Level Fellow of French Governenment, CNRS, Paris, France (Dec 1985 – Dec 1986)   ( 1 Yr)
  • Raman Fellowship  of CSIR  NREL, Golden, Colorado, USA, June 17, 1993 - March  24, 1994  (9 Months)
  • Best  Paper Award in  International PVSEC-6, New Delhi , 1992
  • Visiting  Associateship CGC, Anna University, Madras1992 – 95
  • Consultant,ADB, Manila Sc. Tech. & Energy
  • National Physical  Laboratory Merit Award  1978



Membership   of    Professional    Societies:

  • Vice President and Life member  Electron  Microscopy Soc. of India (EMSI)
  • Life member  Materials Research Society of India (MRSI)
  • Life member  Indian Association of Crystal Growth ( IACG)
  • Life member  Swadeshi Science Movement of India (SSMI)
  • Life member  Indian Crystallographic Association (ICA)
  • Life member  Indian Society of Analytical Scientists (ISAS)


Patents   and   Processes    developed :

  • Process for the Preparation of Polycrystalline Silicon Ingot (US. Patent No. 5,431,869  Dated July 11, 1995)
  • Growth   of   2 inch dia Single    crystals   of   Silicon
  • Growth of 85 mm dia Cylindrical and 50mm X 50mm square cross section Polysilicon Ingots  of   Silicon  for Photovoltaic Applications
  • Growth of 85 mm dia   Germanium   for IR application
  • Growth  of   Polycrystalline Silicon Ingots in Reusable Molds
  • (Indian Patent  Appl  No.  456 / DEL/ 92  Dt. 27.5.92)
  • Development of Screen Printed Gridded back contact pattern for Silicon Solar Cell

 Invited Lectures

Delivered  in  India


  • “ Growth of Silicon Substrates for Photovoltaic Applications” delivered at 2nd National Seminar on Crystal growth, Madras in 1984
  • “Recent Advances in Multicrystalline Silicon Ingot Casting for Photovoltaic Application” delivered at 4th National Seminar on Crystal Growth, Mysore, 1989
  • Specimen Preparation and Characterization of Nanomaterials using TEM
  • Workshop on Techniques in Electron Microscopy ,Ramjas College,University of Delhi, 20th to 22nd June 2011
  • Silicon :  The Work Horse of  Solar Photovoltaic  Energy  Conversion   Faculty Development Program-Environment & Energy Management MAIT, June7-17, 2011
  • Silicon Material and Silicon Solar Cells :Inaugral Lecture at Invenio, Shivaji College, Delhi University, March 19 2018


Delivered in USA


  • “ Directional Solidification of Silicon for Photovoltaic Application” delivered  

               at  University of Arkansas, FAYETTEVILLE (USA), 1994

  • “Scanning Defect Mapping and Light Beam Induced Current System and its   

use in Polycrystalline Silicon Solar Cell Research” delivered at UCEP, Georgia Institute of Technology, Atlanta (USA), 1994

  • “Low  Temperature Aluminum Induced Crystallization of Amorphous Silicon  for Photovoltaic and TFT Applications” 

Materials Science and Engineering Department, Rutgers School of Engineering,State University of New Jersey, June 21, 2012

  • “Aluminum Induced  Crystallization of Amorphous Silicon for Photovoltaic and TFT Applications".   Twin Creeks Technologies, San Jose, CA, Aug 1, 2012


  • " Microstructural investigations of Aluminum Induced Crystallization of Amorphous Silicon for Photo-voltaic and TFT Applications".

Materials Sc. & Engineering Deptt., Stanford Univesrity, Aug 6, 2012

  • “Silicon and Silicon Solar Cells : A Major Source of Photovoltaic Energy Conversion” Mechanical Engineering Seminar Series, Auburn University, Alabam, USA, August 20, 2014


Visits to Conferences/ Institutions Abroad

  • Attended 7th European Photovoltaic Solar Energy Conference held at Sevilla (Spain) during 27-31 October 1986
  • Attended and presented a paper at 4th International Photovoltaic Science and Engineering Conference (PVSEC-4) held at Sydney, Australia I February 1989
  • Attended  IIIrd Workshop on “ The Role of Point Defects/Defect Complexes in Silicon device Processing, Vail, Colorado, USA during August 16-18, 1993
  • Attended 12th National Renewable Energy Laboratory Photovoltaic (NREL PV) Review Meeting, Denver, Colorado (USA) October 13-15, 1993
  • Attended and presented two paper at  Microscopy & Microanalysis 2000 held in   

            Philadelphia, PA, USA during August 13-17, 2000

A  short  visit to the following  Institutes/ Companies  was also  performed  to  have exchange   of  scientific  information and ideas

  • Royal Signal & Radar Establishment (RSRE) , Great Malvern (UK)
  • University of Glasgow (UK)
  • University of Sheffield (UK)
  • New Castle Upon Tyne Polytechnic (UK)
  • M/s Logitech Ltd. , Dumbartonshire , Scotland (UK)
  • National Institute of Standards Technology (NIST), Boulder ( USA)
  • University Center of Excellence in Photovoltaic Research and Education (UCEP), VIII.Georgia Institute of Technology , Atlanta (USA)
  • Rochester Institute of Technology (RIT), Rochester (USA)
  • M/s Kayex Corporation (A General Signal Unit), Rochester (USA)
  • Massachusetts Institute of Technology  (MIT) , Boston, MA (USA)
  • M/s Ferrofluidics Corporation, Nashua, NH (USA)
  • M/s Spire Corporation, Bedford, MA (USA)
  • M/s Crystal Systems , Salem , MA (USA)
  • IBM, Yorktown Heights, NY (USA)IBM, East Fishkil, NY (USA)
  • University of Cambridge, Cambridge (UK)
  • Univesrsity  of Edinbburgh, Edinburgh (UK)
  •  Arizona State University, Tempe, AZ, USA



Some Selected  Publications in International Journals  


  1. Aluminum - Induced Crystallization of Amorphous Silicon (a-Si) at 150C

Ram Kishore, Chris Hotz, H.A. Naseem and W.D. Brown, Electrochemical and Solid-State Letters, (USA) 4 (2001) G14

2.  Technical Note on “Aluminum - Induced Crystallization in Amorphous Silicon (-Si) at 150C” R. Kishore, H. A. Naseem & W. D. Brown, MRS Bulletin (USA) , March 2001, p. 164

3. TEM of Aluminum-Induced Crystallization of Amorphous Silicon R. Kishore, H. A. Naseem & W. D. Brown, Microscopy and Analysis (UK), 23 (2001) 9

4.SEM, STM/STS and heavy ion irradiation studies on magnesium diboride superconductor H. Narayan, S.B. Samanta, A. Gupta, A.V. Narlikar, R. Kishore, K.N. Sood, D. Kanjilal, T. Muranaka and J. Akimitsu ,  Physica C 377 (2002) 1-6

5. Microstructural and Analytical Investigation of Low Temperature Crystallized Amorphous Silicon/Crystallized Silicon Interface using SEM and EDS, Ram Kishore, K.N.Sood and H.A. Naseem, Jr. of Material Science Letters (USA) 21, 2002, 647-648

6.Preparation and Chracterization of Standard Gold Resolution Test Specimen for Electron Microscopy A.K. Srivastava, Kasturi Lal, Sukhvir Singh and Ram Kishore Jr. Meterology Society of India, 18 (2003) pp 159-164

7.Atomic Force Microscopy and X-ray Diffraction Studies of Aluminum Induced Crystallization of Amorphous Silicon in Al/a-Si:H, a-Si:H/Al, and Al/a-Si:H/Al Thin Film Structures Ram Kishore, Arshad Shaik, H. A. Naseem and W. D. Brown, Jr. Vac. Sci. Tech. B (USA) , 21 (2003) pp. 1037-1047

8.Effect of Process Conditions on Microstructural Development During Thermal Evaporation of AlSb Thin Films, K.Lal, A.K. Srivastava, S.Singh and Ram Kishore, Jr. of Material Science Letters (USA) 22 (2003) pp 515-518


9. In–situ X-ray diffraction studies of aluminum–induced crystallization of hydrogenated amorphous silicon’Ram Kishore, Chris Hotz, H. A. Naseem and W. D. Brown, Jr. Applied Crystallography (Switzerland) 36 (2003), 1236-1239

10.Transmission Electron Microscopy and X-ray diffraction Analysis of aluminum-induced crystallization. of Amorphous silicon in a-Si:H/Al and Al/a-Si:H structures ; Ram Kishore, Chris Hotz, H. A. Naseem and W. D. Brown , Microscopy and Microsanalysis (USA) , Vol 11, p. 133-137, 2005

11. Study of Microstructural Changes in MgB2 Thin Film Superconductors Irradiated with 200 MeV 107Ag ions,H. Narayan, Anurag Gupta, A.V. Narlikar, K.N. Sood, Ram Kishore and D. Kanjila Supercond. Sci. Technol. 17 (2004) 1072-1076

12.Electron Microscopy and Diffraction Analysis of Nano-Structured Prussian Blue Thin Films A. K. Srivastava, Ram Kishore, Swati and S. A. Agnihotry, ; Indian J. Eng. Mater. Sci.11 (2004) 315-318

13.Preparation and Characterization of Vacuum Deposited Magnetic Polyanylene Thin FilmsPrafull Mathur, SCK Misra, Ram Kishore, U.C. Upreti and J.L. Pande.Indian J. Eng. Mater. Sci.11 (2004) 353-357

14.On the Impurity Distribution in Thin Silicon Rod Grown by Pulling from a Melt on Pedestal G.C. Jain, S.N. Singh and R. Kishore,  Jr. Crystal Growth (UK) 57 (1982) pp 428-431

15.Solar Cells from Metallurgical Silicon Zone Melted in Polysilicon Tubes, G.C. Jain, S.N. Singh and R. Kishore, Solar Cells (UK) 6 (1982) pp 357 – 363

16. Variability of Performance of Polysilicon Solar Cells, V.D.P. Sastri, R. Kishore and S.B. Manamohanan, Jr. Inst of Electronics & Telecom Engineers 29 (1983) 223

17. Thermionic Emission Diffusion Model of Current Conduction in Polysilicon and Temperature Dependence of  Mobility ; S.N. Singh, R. Kishore and P.K. Singh  Jr. Applied Physics (USA) 57 (1985) 2793

18. Physical Significance of Scaling Factor used in Transport Expression of Polycrystalline Silicon S.N. Singh, P.K. Singh and R. Kishore,  Electronics Letters (UK) 21 (1985) pp 21 – 22

19. Thermionic Emission Diffusion Model for Current Conduction in Polycrystalline Silicon, S.N. Singh, R. Kishore and P.K. Singh, IEEE Trans on Electron Devices (USA) ED-32 (1985) pp 998 – 1000

20.  Modeling and Observation of Photoconductivity in Polycrystalline Silicon,P.K. Singh, S.N. Singh and R. Kishore, Applied Physics Letters (USA) 48 (1986) pp 127 – 129


21.The Determination of Minority Carrier Lifetime in Polycrystalline Silicon by the Photoconductivity Decay Method’ S.N. Singh, R. Kishore and N.K. Arora, Solar Cells (UK) 14 (1985) pp 13 – 25

22. Thin Film Solar Cells using Impure Polycrystalline Silicon, M. Rodot, M. Barbe, J.E. Bouree, V. Perraki, G. Revel, R. Kishore, J.L.Patol, R. Mertens,M. Caymax and M. Eyckmans, Rev Phys Appl (France) 22 (1987) pp 687 – 694

23. Al - related Recombination Center in Polycrystalline Silicon, M. Rodot, A. Mesli, J.E. Bouree, R.Kishore, G. Revel and S. Pizzini, Jr Appl Phys (USA) 62 (1987) pp 2556 – 2558

24, Measurement of Minority Carrier Diffusion Length from Spectral Response of Thin Film Polycrystalline Silicon Solar Cell ; R. Kishore, M. Barbe , J.L. Pastol, M. Caymax, J.E. Bouree , G. Revel and M. Rodot Solar Cells (UK) 25 (1988) pp 1 – 13

25. Photopile en Couche Minces de Silicium Polycrystall : Realisation, Characterisation, Perspectives, R. Kishore , M. Barbe, J.E. Bouree, V. Perraki, M. Rodot, J.L. Pastol, G. Revel and M. Caymax, Annals de Chimie/Science des Matereux (France) 22 (1987 ) pp 423 – 427

26.Growth and Characterisation of Polycrystalline Silicon Ingots Doped with Cu, C, B, or Al by Directional Solidificaion for Photovoltaic ApplicationR. Kishore, J. L. Pastol and G. Revel,  Solar Energy Materials (USA) 19 (1989) pp 221 – 236

27. Transport Current and Microstructure in Yittirium Barium Copper Oxide (YBCO) Superconductors B.V. Reddy, K. Jain, B.S. Khurana, S.U.M. Rao, R.B. Tripathi, R.K. Kotnala, R. Kishore, S.M. Khullar, R.C. Goel, S. Singh and B.K. Das,Solid State Communications (USA) 68 (1988) pp 841 – 845

28. PECVD Grown Silicon Nitride AR Coating on Polycrystalline Silicon Solar Cells, R. Kishore, P. Prakash, S.N. Singh and B.K. Das,  Solar Energy Materials and Solar Cells (USA) 26 (1992) 27 – 35

29.Growth and IR-Transmission of Sb-doped Polycrystalline Germanium,R.Kishore, P. Prakash, S.N. Singh and B.K. Das, Semiconductor Science and Technology (UK) 7 (1992) 21 - 26

30.Temperature Dependence of Resistivity and Hall Mobility in Floating Zone Grown Bulk Silicon - Gemanium Alloys ; R. Kishore, P. Prakash, S.N. Singh and B.K. Das, Jr Appl Phys (USA) 71 (1992) p 4341

31. .Use of Silicon Oxynitride as a Graphite Mold Releasing Coating for Growth of Shaped Multicrystalline Silicon Crystals, P. Prakash, P.K. Singh, S.N. Singh, R. Kishore and B.K. Das, Jr Crystal Growth (UK) 144 (1994) pp 41-47


32..Atomic Force Microscopy Study of FG-annealed and PECVD Silicon Nitride AR-Coated  Silicon Solar Cells, R. Kishore, H.R. Moutinho and B.L. Sopori, Renewable Energy (UK) 6 (1995) 589 – 91

33.  Hard Antireflecting PECVD Silicon Nitride Coatings on Polycrystalline Germanium,         R. Kishore, S.N. Singh and B.K. Das, Infrared Physics and Technology 38 (1997) 83-85

34.. Screen Printed Titanium Oxide and PECVD Grown Silicon Nitride and as Antireflection Coating on Silicon Solar Cells ; Ram Kishore, S.N. Singh and B.K. Das, Renewable Energy (UK) 12 (1997) 131-135

35.. TEM Investigations of Aluminum Assisted Crystallization of Amorphous Silicon ( a-Si:H) Ram Kishore, Chris Hotz, W. D. Brown and H. A. Naseem, Microscopy & Microanalysis(USA) ,Volume 6(2000), Supplt 2, pp. 452-453

36. Scanning Electron Microscopy Studies of Vacuum Evaporated CdCl2 doped Cadmium Sulfide Films.Ram Kishore, Venkat Korapati, W. D. Brown and H. A. Naseem, Microscopy & Microanalysis (USA) Volume 6(2000), Suppl 2, pp. 454-455

37. Preparation and Characterization of Vacuum Deposited Magnetic Polyanylene Thin Films, Prafull Mathur, SCK Misra, Ram Kishore, U.C. Upreti and J.L. Pandey, Indian J. Eng. Mater. Sci.11 (2004) 353-357

38. Sol-gel Processed Nanostructured CeO2-TiO2 Thin Films for Electrochromic Applications, A.Verma, A.K. Srivastava, A.K. Bakhshi, R. Kishore and S.A. Agnihotry,Materials Letters, 59 (2005) 3423-3426

39. Interfacial diffusion effect on metal induced crystallization of an amorphous silicon – a microstructural pathway, A.K.Srivastava, K.N.Sood, R.Kishore and H.A.Naseem, Electrochemical and Solid State Letters, USA  9(2006) G219-G221

40. Effect of process conditions on microstructure and performance of thermally evaporated InSb thin films,  S.Singh, K.Lal, A.K.Srivastava, K.N.Sood and Ram Kishore   Indian J. Eng.Mater.Sci, 14 (2007) 55-63

41. Surface sensitive probe of the morphological and structural aspects of CdSe core shell nanoparticles,   Himani Sharma, Shalesh N, Sharma, Sukhvir Singh, Ram Kishore, Gurmeet Singh, S.M. Shivaprasad, Jr. of applied Surface Science 253 (2007)5325-5333

42. Effect of variable pressure on growth and photoluminescence of ZnO nanostructures A.K. Srivastava, N.Gupta, K.Lal, K.N.Sood and Ram Kishore, Journal of Nanoscience and Nanotechnology, 7 (2007) 1-7